Nucleation and Growth of Graphene on Polycrystalline Cu by Low Pressure Chemical Vapor Deposition

This paper investigates the effects of growth time on the quality of graphene synthesized by low pressure chemical vapor deposition (LPCVD). Large-area single Layered Graphene is synthesized on polycrystalline Cu foil (~1cm2) by LPCVD. The synthesized graphene was characterized using Raman spectroscopy and scanning electron microscopy (SEM).The Raman spectrum showed a IG/I2D ~ 0.2 ratio which indicates that all samples are single-layer graphene and the SEM images demonstrate that the domain size increases when the growth time increases. The growth mechanism of LPCVD graphene on Cu and the mechanisms governing the Raman scattering process in the films are also discussed. The results provide important guidance toward the synthesis of high quality uniform graphene films.

کلیدواژه ها:

Graphene ، low pressure chemical vapor deposition ، Raman Spectrum ، Scanning