Analyze Of Heterostructure MESFET IV-Characterization (AlInAs/GaInAs)

In this paper, the performance of a hetero-junction mesfet (alinas/gainas/alinas) in DC bias zto be examined. The performance of analyzed at different voltages. Simulation and all results obtained is by using the software Silvaco (Atlas). This device uses a hetero-junction structure and use of Schottky bonding at the gate that causes high switching speed (used in circuits switching), The leakage current minimal (Nearby to zero and can be neglected) and the flow rate is high compared to the size device. device has been designed with 135 nm technology and in the dimensions (0.6 * 1 µm). The results obtained from the simulator was very acceptable. For a closer look it can built and tested