We have stutlied the electrical characteristics of a Schottlcy Barrier Double Gate SOI MOSFET (SB-DG-SOI-MOSFET). This structure can operate both in accumulation and inversion mocle and the main current mechanism for this device is tr,tnneling. As Schottlcy barrier height becomes smaller in highly scalecl (SB-DG_ SOI-MOSFET), its performance improves over a similar structure having doped source/drain.

Double Gate SOI MOSFET. Drain Induced Barrier Thinning, Electrical characteristics, Gate Induced Drain Leakage, Schottky Source Drain MOSFET