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Simulation of a CMOS RFC Operation Amplifier Circuit with New Results of DC Gain

عنوان مقاله: Simulation of a CMOS RFC Operation Amplifier Circuit with New Results of DC Gain
شناسه ملی مقاله: ICEEC01_373
منتشر شده در کنفرانس بین المللی تحقیقات بنیادین در مهندسی برق در سال 1396
مشخصات نویسندگان مقاله:

Seyed Vahid Feizakhsh - Department of Electrical Electronics Engineering, Mahabad Branch, Islamic Azad University, Mahabad, Iran
Ghader Yosefi - Department of Electrical Electronics Engineering, Mahabad Branch, Islamic Azad University, Mahabad, Iran

خلاصه مقاله:
In this paper, we re-do simulation of a recycling folded cascode (RFC) op-amp which was published by Rida S. Assaad and et all, in IEEE Journal of Solid-State Circuits. The authors presented and simulated the RFC circuit to obtain DC gain using AC analysis only. They achieved to the results that with increasing the factor of k (the ratio of cross couple transistors in RFC circuit) the DC gain can be improved. But, we criticize their work scientifically and present a contrary result. We calculate and analyze the transconductance and output resistance of RFC op–amp using both DC and AC analysis. So we propose new results and prove this fact that with increasing k (1.5
کلمات کلیدی:
RFC Op-Amp, CMOS, DC gain, DC and AC analysis

صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/673128/