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گواهی نمایه سازی مقاله Optimization of carbon nanotube field-effect transistors (CNTFET) and compare them to CMOS silicon

عنوان مقاله: Optimization of carbon nanotube field-effect transistors (CNTFET) and compare them to CMOS silicon
شناسه (COI) مقاله: JR_UJRSET-3-4_002
منتشر شده در فصلنامه پژوهش در علوم، مهندسی و تکنولوژی در سال ۱۳۹۴
مشخصات نویسندگان مقاله:

Mahdi Salimi - Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran
Kamran Khoddam - Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran
Darya Morakkabatchy - Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran
Maryam Pornadem - Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran

خلاصه مقاله:
In this paper, a brief review of CNT carbon nanotube transistors will be explained and thenthe optimization methods will be discussed. Details of AC and DC transistor CNFET andCharacteristics of CNFET at high temperature also shows that unlike MOSFET flo below thethreshold for this type of component temperature is reduced, thus using CNFET at hightemperatures can be more quickly and less leakage current is achieved. Processes for thesynthesis of CNT are not complete, a subject of controversy in the field fluctuations of densityin CNT growth, as well as an analysis of the credit CNFET because sway density of CNTcould lead to complete failure CNFET, so to evaluate it, and we later CNFET applications incomparison with CMOS logic circuits using the latest research, we ll CNFET.

کلمات کلیدی:
CNTFET, CNTS, Schottkybarrier

صفحه اختصاصی مقاله و دریافت فایل کامل: https://www.civilica.com/Paper-JR_UJRSET-JR_UJRSET-3-4_002.html