Hossein Movla - Department of Solid State Physics, Faculty of Physics, The University of Tabriz, Tabriz ۵۱۵۶۶, Iran
Foozieh Sohrabi - Department of Solid State Physics, Faculty of Physics, The University of Tabriz, Tabriz ۵۱۵۶۶, Iran
Khadije Khalili - Photonics-Electronics Group, Research Institute for Applied Physics, and Astronomy (RIAPA), The University of Tabriz, Tabriz۵۱۶۶۵-۱۶۳, Iran
Hamed Azari Najafabadi - Photonics-Electronics Group, Research Institute for Applied Physics, and Astronomy (RIAPA), The University of Tabriz, Tabriz۵۱۶۶۵-۱۶۳, Iran

This paper indicates the energy conversion efficiency of a quantum dot multilayer solar cell considering impact ionization effect. A p-i-n InxGa1-xN/GaN quantum dot solar cell structure has been taken into account in the calculation. It is shown that the efficiency of a cell strongly depends on the impact ionization in stacked quantum dots at i-region of the cell. In our proposed structure it is demonstrated that, if averaged probability of impact ionization, P, varies from zero to one, maximum efficiency increases by more than 12% (from 43 percent in P=0 to 55 percent in P=1). Also it is demonstrated that by decreasing θ, maximum efficiency increases and reaches to its maximum, 59%, in θ=2.

Quantum dot, intermediate band solar cells, impact ionization