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Numerical Analysis of Ballistic Ultrathin Graphene Nanoribbon Field Effect Transistors

عنوان مقاله: Numerical Analysis of Ballistic Ultrathin Graphene Nanoribbon Field Effect Transistors
شناسه ملی مقاله: ICEE20_495
منتشر شده در بیستمین کنفرانس مهندسی برق ایران در سال 1391
مشخصات نویسندگان مقاله:

Maziar Noei - University of Tehran, Tehran, Iran
Seyed Mohammad Tabatabaei
Morteza Fathipour

خلاصه مقاله:
We have employed a self-consistent solution of openboundary Schrodinger equation based on the non-equilibrium Green’s function formalism coupled to Poisson’s equation inorder to investigate some important characteristics of graphene nanoribbon FETs. Our simulations enable us to compareparameters such as Ion, Ioff and on/off current ratios as well as subthreshold swing and gm in different channel widths and channel lengths. Our results indicate that given the ability to fabricate perfectly patterned few-nanometers wide GNRs, these devices may be able to outperform the current silicon FETs

کلمات کلیدی:
Graphene Nanoribbon FETs, Non-Equilibrium Green’s Function, I-V characteristics, Output parameters

صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/154704/