J. Borsalani - Faculty of Electrical and Robotic Engineering, Shahrood University of Tech., Shahrood, Iran
A. Dastfan - Faculty of Electrical and Robotic Engineering, Shahrood University of Tech., Shahrood, Iran
J. Ghalibafan - Faculty of Electrical and Robotic Engineering, Shahrood University of Tech., Shahrood, Iran

The parasitic parameters of an IGBT power module cause various problems, especially for electromagnetic compatibility (EMC) concerns. The high-variations in voltage and current produced by the inductances/capacitances near switches in the transient process are the main sources of high-frequency electromagnetic interference (EMI). To overcome the problems, the parasitic parameters of the module should be accurately characterized. In this paper, a precise detailed model of a commercial half-bridge IGBT module is presented. It includes the parasitic inductances of leads, bond wires, DBC plates, and the parasitic capacitances of the module and IGBTs. The new simplified analytical equations to calculate the partial inductance and parasitic capacitance are proposed and compared with ANSYS Q۳D results. To evaluate the accuracy of the model, all the parameters are also derived from a two-port measurement-based parasitic extraction method. The results show an acceptable match between the simulated and experimental values. Finally, the proposed model is implemented by state-space dynamic coupling in ANSYS Simplorer circuit simulator, and a double-pulse test circuit is used to verify the model. By comparing the simulated current and voltage waveforms with experiment, it is proved that the proposed model is applicable to simulate the switching transients for EMC study.

Electromagnetic compatibility (EMC), IGBT detailed model, Measurement-based modeling, Parasitic Impedance, ‎Switching transient simulation.‎