M. R. Salehi - Shiraz university of technology
E Abiri - Shiraz university of technology
S. E. Hosseini - Ferdowsi university of Mashad
B. Dorostkar - Shiraz university of technology

in this paper a high performance double gate tunnel field effect transistor (DG-TFET) is proposed. Band gap engineering is achieved in order to improve the device performance. This novelTFET is formed from variable band gap materials with 20 nm channel length to enhance on current and reach to low off-current.With precise selection of mole fraction in materials, and are designated to all region in the device and important characterises of TFET areoptimized. Low sub threshold swing below 60 mv/dec ratio as high as 10

band-to-band tunneling, high-k dielectric, Double-gate, gated p-i-n diode, sub threshold swing,tunneling transistor