Mosayeb nouri - Department of Electrical Engineering , Behbahan Branch, Islamic Azad University, Behbahan, Iran
Gholamhosein moloudian - Department of Electrical Engineering , Behbahan Branch, Islamic Azad University, Behbahan, Iran

In this paper, we focus on designing and simulation of a Gallium nitride (GaN) semiconductor laser with Indium gallium nitride (InGaN) and Aluminium gallium nitride (AlGaN). We've used Indium gallium nitride material and Aluminium gallium nitride in the sides with the mole fraction of x (AlxGa1-xN, InxGa1-xN). For simulation we have used the SILVACO software of ATLAS simulator environment. First, we review a structure similar to the laser and then to describe the materials used in the laser described above. The results show good performance laser. Went on to design another laser material will gallium arsenide.

semiconductor laser, Gallium nitride, active region, power emitted