Shoeib Babaee Touski - Department of electrical engineering, Hamedan University of Technology, Hamedan, Iran
Mohammad Ariapour - Department of Electrical Engineering, Hamedan University of Technology, Hamedan, Iran

In this paper, spin properties of the mono-layer GaTe under biaxial strain is studied. Spin properties of two structures of GaTe, one with mirror symmetry and the other with inversion symmetry, is studied. We have calculated the band structure of GaTe with and without spin-orbit coupling to find out the importance of spin-orbit interaction (SOI) on its band structure. We find band gap can be modified by applying spin-orbit coupling in the presence of strain. We calculate spin-splitting in conduction and valence band in the presence of strain where the structure with inversion symmetry doesn t show any splitting. We find in some cases, GaTe indicates Rashba dispersion that can be adjusted by strain. The amount of Rashba parameters may be in the order of other reported two-dimensional materials.

GaTe, Monolayer, DFT, Quantum-espresso, Rashba, Spin-Splitting.