Investigation of oxidation resistance of graphite based on nano SiC and HfB۲

سال انتشار: 1401
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 114

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شناسه ملی سند علمی:

SECONGRESS01_203

تاریخ نمایه سازی: 1 بهمن 1401

چکیده مقاله:

Nowadays, graphite parts have received attention due to their extraordinary physical, mechanical and thermal properties. Graphite materials have a low coefficient of thermal expansion and relatively high thermal conductivity, to put it another way, they are highly resistant to thermal shock. Also, their strength at high temperature is twice that of steel. They have good machinability and can be produced and used in parts with complex shapes. With the advancement of technology, graphite parts and carbon-carbon composites have been widely used in various industries such as aerospace and energy supply.Nevertheless such advantages, the main problem of carbon materials is their oxidation at a temperature higher than ۴۰۰ °C in an oxidizing environment, which causes a decrease in their strength and other mechanical properties. The best way to strengthen graphite oxidation resistance for application temperatures above ۱۰۰۰°C is to use silicon carbide due to its physical, chemical and thermal expansion coefficient compatibility with the carbon substrate. Among ceramics with high temperature tolerance, HfB۲-based materials are a suitable choice for aerospace applications due to their excellent properties such as high melting point, high strength, and good oxidation resistance at high temperature.In this review, graphite oxidation and the use of silicon carbide and SiC/HfB۲ compound as a graphite protective coating are discussed using newly published sources.

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نویسندگان

Mohammadhossein Rezaei Ghavamabad

Faculty of Materials and Manufacturing Processes, Malek Ashtar University of Technology, Tehran, Iran

Khanali Nekouee

Faculty of Materials and Manufacturing Processes, Malek Ashtar University of Technology, Tehran, Iran

Seyed Ali Khalife Soltani

Faculty of Materials and Manufacturing Processes, Malek Ashtar University of Technology, Tehran, Iran