Phonon Spectra of Monolayer Silicon Carbide

سال انتشار: 1400
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 44

فایل این مقاله در 6 صفحه با فرمت PDF قابل دریافت می باشد

استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این مقاله:

شناسه ملی سند علمی:

JR_JCAS-1-1_011

تاریخ نمایه سازی: 30 دی 1402

چکیده مقاله:

Silicon carbide monolayer is a promising material in the semiconductor industry. The silicon and carbon elements in the two-dimensional silicon carbide are arranged in a two-dimensional hexagonal lattice. The quantum of the crystal lattice vibrations, namely phonons, dominate mainly the physical characteristic of the crystals as a result of electron mobility. It is clear that the number of phonons is zero, from ۸۵ meV to ۱۱۷ meV. In addition, the silicon carbide monolayer sees its phonon density of states (PDOS) maximum at ۱۴۰ meV, confirming that there are more allowed phonon energy levels at this point of energy. There are four peaks from ۰ eV to ۸۵ eV, indicating optical phonons and zone boundary (ZB) phonons. For the low-range energy, all electronic sub-bands correlate acoustic phonons, where the transverse acoustic phonons have lower energy than the longitudinal acoustic modes.

نویسندگان

Samira Salimi

Department of Physics, Fasa University, Fasa, Iran

Hojat Allah Badehian

Department of Physics, Fasa University, Fasa, Iran

Ziad Badehian

Department of Mathematics, Islamic Azad University of Larestan, Larestan, Iran