Enhancing Efficiency of Two-bond Solar Cells Based on GaAs/InGaP

سال انتشار: 1398
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 41

فایل این مقاله در 20 صفحه با فرمت PDF قابل دریافت می باشد

استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این مقاله:

شناسه ملی سند علمی:

JR_JOPN-4-2_007

تاریخ نمایه سازی: 25 بهمن 1402

چکیده مقاله:

Multi-junction solar cells play a crucial role in the ConcentratedPhotovoltaic (CPV) Systems. Recent developments in CPV concerning high powerproduction and cost effective-ness along with better efficiency are due to theadvancements in multi-junction cells. This paper presents a simulation model of thegeneralized Multi-junction solar cell and introduces a two-bond solar cell based onInGaP/GaAs with an AlGaAs/GaAs tunnel layer.For enhancing the efficiency of theproposed solar cell, the model adopts absorption enhancement techniques as well asreducing loss of recombination by manipulating number of junctions and varying thematerial properties of the multi-junctions and the tunneling layer. The proposed Multijunctionsolar cell model employing tunnel junctions can improve efficiency up to by۳۵.۶%. The primary results of the simulation for the proposed structure indicate that it ispossible to reduce the loss of recombination by developing appropriate lattice matchamong the layers; it is also likely to have suitable absorption level of the phonons.Simulation results presented in this paper are in agreement with experimental results.

نویسندگان

Yagub Sefidgar

Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran.

Hassan Rasooli Saghai

Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran.

Hamed Ghatei Khiabani Azar

Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran

مراجع و منابع این مقاله:

لیست زیر مراجع و منابع استفاده شده در این مقاله را نمایش می دهد. این مراجع به صورت کاملا ماشینی و بر اساس هوش مصنوعی استخراج شده اند و لذا ممکن است دارای اشکالاتی باشند که به مرور زمان دقت استخراج این محتوا افزایش می یابد. مراجعی که مقالات مربوط به آنها در سیویلیکا نمایه شده و پیدا شده اند، به خود مقاله لینک شده اند :
  • A. J. Nozik, M. C. Beard, J. M. Luther, M. ...
  • Johnson , Semiconductor Quantum Dots and Quantum Dot Arrays andApplications ...
  • M. Green, Photovoltaic principles, Physical E: Low-dimensional Systemsand Nanostructures, vol. ...
  • M. Yamaguchi, T. Takamoto, K. Araki, and N. EkinsDaukes, Multi-junctioniii–v ...
  • M. Yamaguchi, Super-high-efficiency MJSCs, Progress in photovoltaics:Research and applications, vol. ...
  • F. Dimroth and S. Kurtz, High-efficiency multijunction solar cells, MRSbulletin, ...
  • P. K. Maurya, and P. Chakrabarti, Modeling and simulation ofheterojunction ...
  • A. Mart´ and A. Luque, Next generation photovoltaics: high efficiencythrough ...
  • M. A. Green, K.Emery, D.L.King, S.Igori and W.Warta, Prog, Photovolt:Res. ...
  • Spatial soliton pairs in an unbiased photovoltaic-photorefractive crystal circuit [مقاله ژورنالی]
  • Cotal, D. Joslin, D. Krutet al., Next-generation, high-efficiency iii-vmultijunction solar ...
  • Vurgaftman, J. Meyer, J. Abell, R. Walters, C. Cress et ...
  • W. Guter and A. Bett, I-v characterization of devices consisting ...
  • Electron, ۶ ,۲۱–۲۴, ۱۹۹۵[۱۷] Ghatei Khiabani Azar H, Rasouli Saghai ...
  • The Effect of Doping and the Thickness of the Layers on CIGS Solar Cell Efficiency [مقاله ژورنالی]
  • Spatial soliton pairs in an unbiased photovoltaic-photorefractive crystal circuit [مقاله ژورنالی]
  • Numerical Simulation of CdS/CIGS Tandem Multi-Junction Solar Cells with AMPS-۱D [مقاله ژورنالی]
  • Mirkamali, A., Muminov, K. , The Effect of Change the ...
  • Parkinson and A. Heller, Reduction of GaAs surface recombinationvelocity by ...
  • L. W. Molenkamp and H. F. J. van't Blik, Very ...
  • ۴۲۵۳, ۱۹۸۸ ...
  • J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. ...
  • Ultralow recombination velocity at Ga۰.۵In۰.۵P/GaAs heterointerfaces,Applied Physics Letters Vol. ۵۵, ...
  • G. H. Olsen, M. Ettenberg, and R. V. D’Aiello, Vapor-grown ...
  • L. Pavesi, M.Guzzi, Photoluminescence of AlxGa۱-xAs alloys, Journal ofAppied. Physics, ...
  • K. W. J. Barnham and G. Duggan, A new approach ...
  • K. W. J. Barnham and D. Vvedensky, Low-Dimensional semiconductorstructures, Cambridge ...
  • K. W. J. Barnham, I. Ballard, J. Connolly, et all, ...
  • F. Dimroth, High- efficiency solar cells from III-V compoundsemiconductors, phys.spl.(c)۲.(۳۱۱۲),۲۰۱۶ ...
  • H.jianmin, W. Yiyoung , X.Jingdong, Y.Dezhuang , and Z.Zhhongwei,Degradation behaviors ...
  • Dorna Mortezapour, Javad Karamdel, Mohamadali Moradian,Improvement of Radiation Resistance in ...
  • Malmström, J., On Generation and Recombination in Cu(In,Ga)Se۲ Thin-Film Solar ...
  • Brübach, J., Ultrathin InAs/GaAs quantum wells : electronic structure,excitonic effects ...
  • G. A. M. Hurkx, D. B. M. Klaassen, and M. ...
  • Silvaco International, Silvaco User's Manual, ed. Silvaco, ۲۰۰۶ ...
  • http://www.pveducation.org/[۳۷] W. Guter and A. Bett, I-v characterization of tunnel ...
  • B. Sagol, N. Szabo, H. Doscher, U. Seidel, C. Hohn, ...
  • M. Hermle, G. Letay, S. Philipps, and A. Bett, Numerical ...
  • نمایش کامل مراجع