Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser

In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation and rate equations of HBTL. We compare the performance (current gain,output photon number and small signal modulation bandwidth) of the transistor laserwith different levels of the kirk current. We show that, at high collector currents, thestatic and small signal behavior of HBTL depend on kirk current level. The resultsindicate that, the level of kirk current affect current gain, output photon number andmodulation bandwidth From simulation results, it can befound that, kirk effect hasdestructive influence on HBTL performance. It was found that lower modulationbandwidth and lower current gain occurs at lower kirk current level. For increasing kirkcurrent, the high collector-base voltage and high collector length was proposed.

کلیدواژه ها:

Quantum well ، Heterojunction Bipolar Transistor lasers (HBTLs) ، Kirk Effect ، Saturation Velocity