Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study

Structural, electronic, and optical properties of one-dimensional (۱D) SnGeand SnC with two types (armchair and zigzag) and different widths are studied by usingfirst-principles calculations. The atoms of these structures in edges are passivated byhydrogen. The results show armchair SnGe and SnC nanoribbons (A-SnXNRs, X=Ge, C)are the direct semiconducting and divided into three distinct families W=۳p, W=۳p+۱,and W=۳p+۲, (p is a positive integer). By increasing width, the band gaps converge to۱.۷۱ eV and ۰.۱۵ eV for A-SnCNRs and A-SnGeNRs, respectively. Furthermore, theposition of the first peak of the dielectric function in both of them occurs in their value ofdirect band gap at ا point. also, the absorption coefficient for ۹, ۱۱, ۱۳ A-SnCNRsdisplays that there is no absorption at the lower energy range from ۰ to ۱.۲ eV, whereasabsorption characteristics for ۹, ۱۱, and ۱۳ A-SnGeNRs appeared at near-infrared to thevisible spectrum. These results can provide important information for the use of GroupIV binary compounds in electronic devices.

کلیدواژه ها:

SnC and SnGe nanoribbon ، Electronic properties ، Dielectric Function ، First-principles study