Study on Single Junction GaAs Solar Cell with Optimized Structure, High Radiation Resistance and Graded Doping Concentration

Damage effects in an experimental single junction (SJ) GaAs solar cell irradiated by energy of 1MeV electrons and with the fluence up to 1016 e/cm2 was investigated by evaluating outputcharacteristics and under AM0 illumination. The electrical properties showed sever degradation due to radiation-induceddefects and over changing fluence levels. We improved the operation o f the SJ GaAs cell by increasing doping level in thedown layer (p-GaAs) and using grading doping concentrationtechnique in the top layer (n-GaAs). These changes caused significant differences between experimental and simulated cell output characteristics. So after optimization our new structure with the least deterioration has been prepared. According to the simulation results, we have created a high radiation resistance SJ GaAs cell by changes in electrical properties.

کلیدواژه ها:

Single junction GaAs solar cell ، Radiation resistance ، Graded Doping ،