Effect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL)

Abstract: In this study, the effects of variation of thickness and the number of quantumwells as well as the contact length were investigated. In this paper, a vertical cavity surfaceemitting laser was simulated using of software based on finite element method. Thenumber of quantum wells was changed from ۳ to ۹ and the results which are related tooutput power, resonance wavelength and threshold current were extracted. Outputspecifications in terms of quantum wells thicknesses of ۳.۵nm to ۹.۵nm were evaluated.Contact thickness is also changed from ۰.۵μm to ۳μm. Results showed that as the numberof quantum wells increased, the resonance wavelength also increased and photon energydecreased. By reducing the thickness of the quantum well, the threshold current andradiation wavelength were also decreased. By increasing the contact length, thresholdcurrent and output power increased. Temperature inside the network and density ofphoton were increased as the contact length increased

کلیدواژه ها:

Quantum well ، Contact Length ، Threshold Current ، Output Power ، Vertical Cavity Surface Emitting Laser (VCSEL)