Theoretical investigation of dynamic characteristicsof Quantum Dot Semiconductor Optical Amplifier

Self-assembled quantum dots have emerged useful nanostructures that can be epitaxiallygrown and incorporated in the active region of semiconductor devices. These structuresshow especial properties due to the carriers three dimensional confinement. A noveltheoretical time-domain model has been presented for a Quantum-Dot SemiconductorOptical Amplifier that allows simulating and providing prospects and dynamiccharacteristics of QD-SOA. It is evident that self-organized optoelectronic devicesdemonstrate unique characteristics rather than Bulk and Quantum-Well optical amplifiers.The gain dynamics of QD-SOAs are strongly dependent on the current injection level.The carrier reservoir in the wetting layer of QD-SOA is necessary to operate with highgain, high saturation power, and ultrafast gain recovery. In this paper dynamiccharacteristics of QD-SOA have been studied precisely. As a simplified model, bothhomogeneous and inhomogeneous broadening effects are ignored. The present analysisprovides insight on performance and important characteristics of the QD-SOA.

کلیدواژه ها:

Finite Difference Time Domain method ، Gain recovery ، Quantum Dot SemiconductorOptical Amplifier ، Rate Equation